Selective area growth rates of III-V nanowires

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

Selective area growth rates of III-V nanowires. / Cachaza, Martin Espineira; Christensen, Anna Wulff; Beznasyuk, Daria; Saerkjaer, Tobias; Madsen, Morten Hannibal; Tanta, Rawa; Nagda, Gunjan; Schuwalow, Sergej; Krogstrup, Peter.

In: Physical Review Materials, Vol. 5, No. 9, 094601, 01.09.2021.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Cachaza, ME, Christensen, AW, Beznasyuk, D, Saerkjaer, T, Madsen, MH, Tanta, R, Nagda, G, Schuwalow, S & Krogstrup, P 2021, 'Selective area growth rates of III-V nanowires', Physical Review Materials, vol. 5, no. 9, 094601. https://doi.org/10.1103/PhysRevMaterials.5.094601

APA

Cachaza, M. E., Christensen, A. W., Beznasyuk, D., Saerkjaer, T., Madsen, M. H., Tanta, R., Nagda, G., Schuwalow, S., & Krogstrup, P. (2021). Selective area growth rates of III-V nanowires. Physical Review Materials, 5(9), [094601]. https://doi.org/10.1103/PhysRevMaterials.5.094601

Vancouver

Cachaza ME, Christensen AW, Beznasyuk D, Saerkjaer T, Madsen MH, Tanta R et al. Selective area growth rates of III-V nanowires. Physical Review Materials. 2021 Sep 1;5(9). 094601. https://doi.org/10.1103/PhysRevMaterials.5.094601

Author

Cachaza, Martin Espineira ; Christensen, Anna Wulff ; Beznasyuk, Daria ; Saerkjaer, Tobias ; Madsen, Morten Hannibal ; Tanta, Rawa ; Nagda, Gunjan ; Schuwalow, Sergej ; Krogstrup, Peter. / Selective area growth rates of III-V nanowires. In: Physical Review Materials. 2021 ; Vol. 5, No. 9.

Bibtex

@article{b1fc7758c19043e3937e4d8e3bea4dda,

title = "Selective area growth rates of III-V nanowires",

abstract = "Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays. We propose a model for the crystal growth rates that considers two parameter groups: the crystal growth control parameters and the design parameters. Using GaAs and InGaAs SAG NWs as a platform, we show how the design parameters such as NW pitch, width, and orientation have an impact on the growth rates. We demonstrate that by varying the control parameters (i.e., substrate temperature and beam fluxes) source, balance, and sink growth modes may exist in the SAG selectivity window. Using this model, we show that inhomogeneous growth rates can be compensated by tuning the design parameters.",

keywords = "MOLECULAR-BEAM EPITAXY, GAAS, SURFACTANT, GAAS(001), MBE",

author = "Cachaza, {Martin Espineira} and Christensen, {Anna Wulff} and Daria Beznasyuk and Tobias Saerkjaer and Madsen, {Morten Hannibal} and Rawa Tanta and Gunjan Nagda and Sergej Schuwalow and Peter Krogstrup",

year = "2021",

month = sep,

day = "1",

doi = "10.1103/PhysRevMaterials.5.094601",

language = "English",

volume = "5",

journal = "Physical Review Materials",

issn = "2475-9953",

publisher = "American Physical Society",

number = "9",

}

RIS

TY - JOUR

T1 - Selective area growth rates of III-V nanowires

AU - Cachaza, Martin Espineira

AU - Christensen, Anna Wulff

AU - Beznasyuk, Daria

AU - Saerkjaer, Tobias

AU - Madsen, Morten Hannibal

AU - Tanta, Rawa

AU - Nagda, Gunjan

AU - Schuwalow, Sergej

AU - Krogstrup, Peter

PY - 2021/9/1

Y1 - 2021/9/1

N2 - Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays. We propose a model for the crystal growth rates that considers two parameter groups: the crystal growth control parameters and the design parameters. Using GaAs and InGaAs SAG NWs as a platform, we show how the design parameters such as NW pitch, width, and orientation have an impact on the growth rates. We demonstrate that by varying the control parameters (i.e., substrate temperature and beam fluxes) source, balance, and sink growth modes may exist in the SAG selectivity window. Using this model, we show that inhomogeneous growth rates can be compensated by tuning the design parameters.

AB - Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays. We propose a model for the crystal growth rates that considers two parameter groups: the crystal growth control parameters and the design parameters. Using GaAs and InGaAs SAG NWs as a platform, we show how the design parameters such as NW pitch, width, and orientation have an impact on the growth rates. We demonstrate that by varying the control parameters (i.e., substrate temperature and beam fluxes) source, balance, and sink growth modes may exist in the SAG selectivity window. Using this model, we show that inhomogeneous growth rates can be compensated by tuning the design parameters.

KW - MOLECULAR-BEAM EPITAXY

KW - GAAS

KW - SURFACTANT

KW - GAAS(001)

KW - MBE

U2 - 10.1103/PhysRevMaterials.5.094601

DO - 10.1103/PhysRevMaterials.5.094601

M3 - Journal article

VL - 5

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 9

M1 - 094601

ER -

ID: 279268991