Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface
Research output: Contribution to journal › Journal article › Research › peer-review
Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified by the strain-induced heavy-hole/light-hole splitting.
|Journal||Journal of Applied Physics|
|Number of pages||5|
|Publication status||Published - 15 Sep 2003|
- Faculty of Science