Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

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Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified by the strain-induced heavy-hole/light-hole splitting.
Original languageEnglish
JournalJournal of Applied Physics
Issue number6
Pages (from-to)3990-3994
Number of pages5
Publication statusPublished - 15 Sep 2003

ID: 113616