Atomic Structure of InAs/GaAs Interfaces in Nanowires Grown under Vapor-Liquid-Solid (VLS) Conditions, 7th International Conference on High Temperature Capillarity, Eilat-2012
Publikation: Andet › Andet bidrag › Forskning
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Atomic Structure of InAs/GaAs Interfaces in Nanowires Grown under Vapor-Liquid-Solid (VLS) Conditions, 7th International Conference on High Temperature Capillarity, Eilat-2012. / Johnson, Erik.
Eilat, Israel. 2012Invited talk.Publikation: Andet › Andet bidrag › Forskning
Harvard
Johnson, E 2012, Atomic Structure of InAs/GaAs Interfaces in Nanowires Grown under Vapor-Liquid-Solid (VLS) Conditions, 7th International Conference on High Temperature Capillarity, Eilat-2012. Eilat, Israel. <http://www.htc2012.org/>
APA
Johnson, E. (2012, mar. 18). Atomic Structure of InAs/GaAs Interfaces in Nanowires Grown under Vapor-Liquid-Solid (VLS) Conditions, 7th International Conference on High Temperature Capillarity, Eilat-2012. http://www.htc2012.org/
Vancouver
Johnson E. Atomic Structure of InAs/GaAs Interfaces in Nanowires Grown under Vapor-Liquid-Solid (VLS) Conditions, 7th International Conference on High Temperature Capillarity, Eilat-2012. 2012.
Author
Bibtex
@misc{969e5f3be46d4e88a345b3cdec77179b,
title = "Atomic Structure of InAs/GaAs Interfaces in Nanowires Grown under Vapor-Liquid-Solid (VLS) Conditions, 7th International Conference on High Temperature Capillarity, Eilat-2012",
author = "Erik Johnson",
year = "2012",
month = mar,
day = "18",
language = "English",
type = "Other",
}
RIS
TY - GEN
T1 - Atomic Structure of InAs/GaAs Interfaces in Nanowires Grown under Vapor-Liquid-Solid (VLS) Conditions, 7th International Conference on High Temperature Capillarity, Eilat-2012
AU - Johnson, Erik
PY - 2012/3/18
Y1 - 2012/3/18
M3 - Other contribution
CY - Eilat, Israel
ER -
ID: 41843008