g-factors in LaAlO3/SrTiO3 quantum dots

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Standard

g-factors in LaAlO3/SrTiO3 quantum dots. / Bjorlig, Anders V.; Carrad, Damon J.; Prawiroatmodjo, Guenevere E. D. K.; von Soosten, Merlin; Gan, Yulin; Chen, Yunzhong; Pryds, Nini; Paaske, Jens; Jespersen, Thomas S.

I: Physical Review Materials, Bind 4, Nr. 12, 122001, 03.12.2020.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt

Harvard

Bjorlig, AV, Carrad, DJ, Prawiroatmodjo, GEDK, von Soosten, M, Gan, Y, Chen, Y, Pryds, N, Paaske, J & Jespersen, TS 2020, 'g-factors in LaAlO3/SrTiO3 quantum dots', Physical Review Materials, bind 4, nr. 12, 122001. https://doi.org/10.1103/PhysRevMaterials.4.122001

APA

Bjorlig, A. V., Carrad, D. J., Prawiroatmodjo, G. E. D. K., von Soosten, M., Gan, Y., Chen, Y., Pryds, N., Paaske, J., & Jespersen, T. S. (2020). g-factors in LaAlO3/SrTiO3 quantum dots. Physical Review Materials, 4(12), [122001]. https://doi.org/10.1103/PhysRevMaterials.4.122001

Vancouver

Bjorlig AV, Carrad DJ, Prawiroatmodjo GEDK, von Soosten M, Gan Y, Chen Y o.a. g-factors in LaAlO3/SrTiO3 quantum dots. Physical Review Materials. 2020 dec. 3;4(12). 122001. https://doi.org/10.1103/PhysRevMaterials.4.122001

Author

Bjorlig, Anders V. ; Carrad, Damon J. ; Prawiroatmodjo, Guenevere E. D. K. ; von Soosten, Merlin ; Gan, Yulin ; Chen, Yunzhong ; Pryds, Nini ; Paaske, Jens ; Jespersen, Thomas S. / g-factors in LaAlO3/SrTiO3 quantum dots. I: Physical Review Materials. 2020 ; Bind 4, Nr. 12.

Bibtex

@article{78e7becf9ce94a6cb7932b728aea1cc4,
title = "g-factors in LaAlO3/SrTiO3 quantum dots",
abstract = "We investigate the g-factors of individual electron states in gate-defined quantum dots fabricated from LaAlO3/SrTiO3 heterostructures. We consider both the case of effective positive charging energy (U > 0) where single electrons are added upon increasing the local gate voltage, and the case of U <0 where electron pairing is observed. The g-factors are extracted from the field dependence of the quantum dot addition spectrum. Tunnel couplings and confinement are tunable by the gate voltages and in the regime of weakest coupling, we find g-factors close to 2 due to quenching of the orbital magnetic moment. For stronger coupling, g-factors are anisotropic and exhibit values up to similar to 4.5 in the out-of-plane orientation. We further show examples of the sequential addition of electrons with the same spin as a consequence of exchange interactions.",
author = "Bjorlig, {Anders V.} and Carrad, {Damon J.} and Prawiroatmodjo, {Guenevere E. D. K.} and {von Soosten}, Merlin and Yulin Gan and Yunzhong Chen and Nini Pryds and Jens Paaske and Jespersen, {Thomas S.}",
year = "2020",
month = dec,
day = "3",
doi = "10.1103/PhysRevMaterials.4.122001",
language = "English",
volume = "4",
journal = "Physical Review Materials",
issn = "2476-0455",
publisher = "American Physical Society",
number = "12",

}

RIS

TY - JOUR

T1 - g-factors in LaAlO3/SrTiO3 quantum dots

AU - Bjorlig, Anders V.

AU - Carrad, Damon J.

AU - Prawiroatmodjo, Guenevere E. D. K.

AU - von Soosten, Merlin

AU - Gan, Yulin

AU - Chen, Yunzhong

AU - Pryds, Nini

AU - Paaske, Jens

AU - Jespersen, Thomas S.

PY - 2020/12/3

Y1 - 2020/12/3

N2 - We investigate the g-factors of individual electron states in gate-defined quantum dots fabricated from LaAlO3/SrTiO3 heterostructures. We consider both the case of effective positive charging energy (U > 0) where single electrons are added upon increasing the local gate voltage, and the case of U <0 where electron pairing is observed. The g-factors are extracted from the field dependence of the quantum dot addition spectrum. Tunnel couplings and confinement are tunable by the gate voltages and in the regime of weakest coupling, we find g-factors close to 2 due to quenching of the orbital magnetic moment. For stronger coupling, g-factors are anisotropic and exhibit values up to similar to 4.5 in the out-of-plane orientation. We further show examples of the sequential addition of electrons with the same spin as a consequence of exchange interactions.

AB - We investigate the g-factors of individual electron states in gate-defined quantum dots fabricated from LaAlO3/SrTiO3 heterostructures. We consider both the case of effective positive charging energy (U > 0) where single electrons are added upon increasing the local gate voltage, and the case of U <0 where electron pairing is observed. The g-factors are extracted from the field dependence of the quantum dot addition spectrum. Tunnel couplings and confinement are tunable by the gate voltages and in the regime of weakest coupling, we find g-factors close to 2 due to quenching of the orbital magnetic moment. For stronger coupling, g-factors are anisotropic and exhibit values up to similar to 4.5 in the out-of-plane orientation. We further show examples of the sequential addition of electrons with the same spin as a consequence of exchange interactions.

U2 - 10.1103/PhysRevMaterials.4.122001

DO - 10.1103/PhysRevMaterials.4.122001

M3 - Journal article

VL - 4

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2476-0455

IS - 12

M1 - 122001

ER -

ID: 255161388