Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots

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Standard

Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots. / An, Sung Jin; Bae, Myung-Ho; Lee, Myoung-Jae; Song, Man Suk; Madsen, Morten H.; Nygard, Jesper; Schonenberger, Christian; Baumgartner, Andreas; Seo, Jungpil; Jung, Minkyung.

I: Nanoscale Advances, Bind 2022, Nr. 4, 11.08.2022, s. 3816-3823.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt

Harvard

An, SJ, Bae, M-H, Lee, M-J, Song, MS, Madsen, MH, Nygard, J, Schonenberger, C, Baumgartner, A, Seo, J & Jung, M 2022, 'Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots', Nanoscale Advances, bind 2022, nr. 4, s. 3816-3823. https://doi.org/10.1039/d2na00372d

APA

An, S. J., Bae, M-H., Lee, M-J., Song, M. S., Madsen, M. H., Nygard, J., Schonenberger, C., Baumgartner, A., Seo, J., & Jung, M. (2022). Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots. Nanoscale Advances, 2022(4), 3816-3823. https://doi.org/10.1039/d2na00372d

Vancouver

An SJ, Bae M-H, Lee M-J, Song MS, Madsen MH, Nygard J o.a. Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots. Nanoscale Advances. 2022 aug. 11;2022(4):3816-3823. https://doi.org/10.1039/d2na00372d

Author

An, Sung Jin ; Bae, Myung-Ho ; Lee, Myoung-Jae ; Song, Man Suk ; Madsen, Morten H. ; Nygard, Jesper ; Schonenberger, Christian ; Baumgartner, Andreas ; Seo, Jungpil ; Jung, Minkyung. / Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots. I: Nanoscale Advances. 2022 ; Bind 2022, Nr. 4. s. 3816-3823.

Bibtex

@article{06189f93a65147c3a7df2342b60e745e,
title = "Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots",
abstract = "We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 mu m lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines.",
keywords = "ACCURACY",
author = "An, {Sung Jin} and Myung-Ho Bae and Myoung-Jae Lee and Song, {Man Suk} and Madsen, {Morten H.} and Jesper Nygard and Christian Schonenberger and Andreas Baumgartner and Jungpil Seo and Minkyung Jung",
year = "2022",
month = aug,
day = "11",
doi = "10.1039/d2na00372d",
language = "English",
volume = "2022",
pages = "3816--3823",
journal = "Nanoscale Advances",
issn = "2516-0230",
publisher = "Royal Society of Chemistry",
number = "4",

}

RIS

TY - JOUR

T1 - Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots

AU - An, Sung Jin

AU - Bae, Myung-Ho

AU - Lee, Myoung-Jae

AU - Song, Man Suk

AU - Madsen, Morten H.

AU - Nygard, Jesper

AU - Schonenberger, Christian

AU - Baumgartner, Andreas

AU - Seo, Jungpil

AU - Jung, Minkyung

PY - 2022/8/11

Y1 - 2022/8/11

N2 - We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 mu m lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines.

AB - We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 mu m lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines.

KW - ACCURACY

U2 - 10.1039/d2na00372d

DO - 10.1039/d2na00372d

M3 - Journal article

C2 - 36133323

VL - 2022

SP - 3816

EP - 3823

JO - Nanoscale Advances

JF - Nanoscale Advances

SN - 2516-0230

IS - 4

ER -

ID: 317436442