On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers

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Standard

On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers. / Brunthaler, G.; Prinz, A.; Lindelof, P.E.

I: Physica E, Nr. 13, 2002, s. 691.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning

Harvard

Brunthaler, G, Prinz, A & Lindelof, PE 2002, 'On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers', Physica E, nr. 13, s. 691.

APA

Brunthaler, G., Prinz, A., & Lindelof, P. E. (2002). On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers. Physica E, (13), 691.

Vancouver

Brunthaler G, Prinz A, Lindelof PE. On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers. Physica E. 2002;(13):691.

Author

Brunthaler, G. ; Prinz, A. ; Lindelof, P.E. / On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers. I: Physica E. 2002 ; Nr. 13. s. 691.

Bibtex

@article{962db9c074c511dbbee902004c4f4f50,
title = "On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers",
author = "G. Brunthaler and A. Prinz and P.E. Lindelof",
year = "2002",
language = "English",
pages = "691",
journal = "Physica E",
publisher = "Elsevier",
number = "13",

}

RIS

TY - JOUR

T1 - On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers

AU - Brunthaler, G.

AU - Prinz, A.

AU - Lindelof, P.E.

PY - 2002

Y1 - 2002

M3 - Journal article

SP - 691

JO - Physica E

JF - Physica E

IS - 13

ER -

ID: 134677