Superconductivity and Parity Preservation in As-Grown In Islands on InAs Nanowires
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Superconductivity and Parity Preservation in As-Grown In Islands on InAs Nanowires. / Bjergfelt, Martin Saurbrey; Carrad, Damon J.; Kanne, Thomas; Johnson, Erik; Fiordaliso, Elisabetta M.; Jespersen, Thomas Sand; Nygard, Jesper.
I: Nano Letters, Bind 21, Nr. 23, 08.12.2021, s. 9875-9881.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
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TY - JOUR
T1 - Superconductivity and Parity Preservation in As-Grown In Islands on InAs Nanowires
AU - Bjergfelt, Martin Saurbrey
AU - Carrad, Damon J.
AU - Kanne, Thomas
AU - Johnson, Erik
AU - Fiordaliso, Elisabetta M.
AU - Jespersen, Thomas Sand
AU - Nygard, Jesper
PY - 2021/12/8
Y1 - 2021/12/8
N2 - We report in situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centered crystal structure within two families of orientations relative to wurtzite InAs. The crystalline islands had lengths < 500 nm and low-energy surfaces, suggesting that growth was driven mainly by surface energy minimization. Electrical transport through In/InAs devices exhibited Cooper pair charging, evidencing charge parity preservation and a pristine In/InAs interface, with an induced superconducting gap similar to 0.45 meV. Cooper pair charging persisted to temperatures > 1.2 K and magnetic fields similar to 0.7 T, demonstrating that In/InAs hybrids belong to an expanding class of semiconductor/superconductor hybrids operating over a wider parameter space than state-of-the-art Al-based hybrids. Engineering crystal morphology while isolating single islands using shadow epitaxy provides an interesting alternative to previous semiconductor/superconductor hybrid morphologies and device geometries.
AB - We report in situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centered crystal structure within two families of orientations relative to wurtzite InAs. The crystalline islands had lengths < 500 nm and low-energy surfaces, suggesting that growth was driven mainly by surface energy minimization. Electrical transport through In/InAs devices exhibited Cooper pair charging, evidencing charge parity preservation and a pristine In/InAs interface, with an induced superconducting gap similar to 0.45 meV. Cooper pair charging persisted to temperatures > 1.2 K and magnetic fields similar to 0.7 T, demonstrating that In/InAs hybrids belong to an expanding class of semiconductor/superconductor hybrids operating over a wider parameter space than state-of-the-art Al-based hybrids. Engineering crystal morphology while isolating single islands using shadow epitaxy provides an interesting alternative to previous semiconductor/superconductor hybrid morphologies and device geometries.
KW - nanowires
KW - nanoscale superconductors
KW - indium
KW - hybrid nanowires
KW - quantum materials
KW - MAJORANA FERMIONS
KW - QUANTUM
KW - PERIODICITY
KW - LIFETIME
KW - EPITAXY
KW - INDIUM
KW - 2E
U2 - 10.1021/acs.nanolett.1c02487
DO - 10.1021/acs.nanolett.1c02487
M3 - Journal article
C2 - 34807620
VL - 21
SP - 9875
EP - 9881
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 23
ER -
ID: 299400004