Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

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  • E127202

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We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.
Original languageEnglish
JournalPhysical Review Letters
Issue number12
Pages (from-to)127202
Number of pages4
Publication statusPublished - 1 Jan 2006

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