Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

Research output: Contribution to journalJournal articlepeer-review

Documents

  • E127202

    Final published version, 802 KB, PDF document

We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.
Original languageEnglish
JournalPhysical Review Letters
Volume97
Issue number12
Pages (from-to)127202
Number of pages4
ISSN0031-9007
DOIs
Publication statusPublished - 1 Jan 2006

Number of downloads are based on statistics from Google Scholar and www.ku.dk


No data available

ID: 44225527