Electroabsorption in gated GaAs nanophotonic waveguides
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We report on the analysis of electroabsorption in thin GaAs/Al0.3Ga0.7As nanophotonic waveguides with an embedded p-i-n junction. By measuring the transmission through waveguides of different lengths, we derive the propagation loss as a function of electric field, wavelength, and temperature. The results are in good agreement with the Franz-Keldysh model of electroabsorption extending over 200meV below the GaAs bandgap, i.e., in the wavelength range of 910-970nm. We find a pronounced residual absorption in forward bias, which we attribute to Fermi-level pinning at the waveguide surface, producing over 20dB/mm loss at room temperature. These results are essential for understanding the origin of loss in nanophotonic devices operating in the emission range of self-assembled InAs semiconductor quantum dots toward the realization of scalable quantum photonic integrated circuits.
Originalsprog | Engelsk |
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Artikelnummer | 131106 |
Tidsskrift | Applied Physics Letters |
Vol/bind | 118 |
Udgave nummer | 13 |
Antal sider | 6 |
ISSN | 0003-6951 |
DOI | |
Status | Udgivet - 29 mar. 2021 |
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