Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires
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Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires. / Stampfer, Lukas; Carrad, Damon J.; Olsteins, Dags; Petersen, Christian Emanuel N.; Khan, Sabbir A.; Krogstrup, Peter; Jespersen, Thomas S.
I: Advanced Materials, Bind 34, Nr. 11, 2108878, 17.03.2022.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
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TY - JOUR
T1 - Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires
AU - Stampfer, Lukas
AU - Carrad, Damon J.
AU - Olsteins, Dags
AU - Petersen, Christian Emanuel N.
AU - Khan, Sabbir A.
AU - Krogstrup, Peter
AU - Jespersen, Thomas S.
N1 - Publisher Copyright: © 2022 Wiley-VCH GmbH
PY - 2022/3/17
Y1 - 2022/3/17
N2 - Understanding the spatial distribution of charge carriers in III–V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of half-shell InAsSb/Al nanowires is studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibit periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution is tunable by a gate potential as expected from electrostatic models.
AB - Understanding the spatial distribution of charge carriers in III–V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of half-shell InAsSb/Al nanowires is studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibit periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution is tunable by a gate potential as expected from electrostatic models.
KW - hybrid superconductivity
KW - quantum interference
KW - quantum transport
KW - semiconductor nanowires
KW - surface accumulation
U2 - 10.1002/adma.202108878
DO - 10.1002/adma.202108878
M3 - Journal article
C2 - 35050545
AN - SCOPUS:85124462938
VL - 34
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 11
M1 - 2108878
ER -
ID: 307335424