Atomic structure of GaAs nanowires and InAs/GaAs graded interfaces in nanowires grown under VLS conditions The XXXIII Annual Meeting of the Electron Microscopy Society of India, Bangalore -2012
Publikation: Andet › Andet bidrag › Forskning
Standard
Atomic structure of GaAs nanowires and InAs/GaAs graded interfaces in nanowires grown under VLS conditions The XXXIII Annual Meeting of the Electron Microscopy Society of India, Bangalore -2012. / Johnson, Erik.
Bangalore, India. 2012Invited talk.Publikation: Andet › Andet bidrag › Forskning
Harvard
Johnson, E 2012, Atomic structure of GaAs nanowires and InAs/GaAs graded interfaces in nanowires grown under VLS conditions The XXXIII Annual Meeting of the Electron Microscopy Society of India, Bangalore -2012. Bangalore, India.
APA
Johnson, E. (2012, jul. 2). Atomic structure of GaAs nanowires and InAs/GaAs graded interfaces in nanowires grown under VLS conditions The XXXIII Annual Meeting of the Electron Microscopy Society of India, Bangalore -2012.
Vancouver
Johnson E. Atomic structure of GaAs nanowires and InAs/GaAs graded interfaces in nanowires grown under VLS conditions The XXXIII Annual Meeting of the Electron Microscopy Society of India, Bangalore -2012. 2012.
Author
Bibtex
@misc{176678c1b9944fec9849614e8dbe0d49,
title = "Atomic structure of GaAs nanowires and InAs/GaAs graded interfaces in nanowires grown under VLS conditions The XXXIII Annual Meeting of the Electron Microscopy Society of India, Bangalore -2012",
author = "Erik Johnson",
year = "2012",
month = jul,
day = "2",
language = "English",
type = "Other",
}
RIS
TY - GEN
T1 - Atomic structure of GaAs nanowires and InAs/GaAs graded interfaces in nanowires grown under VLS conditions The XXXIII Annual Meeting of the Electron Microscopy Society of India, Bangalore -2012
AU - Johnson, Erik
PY - 2012/7/2
Y1 - 2012/7/2
M3 - Other contribution
CY - Bangalore, India
ER -
ID: 41843037