Standard
Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection. / Sestoft, Joachim E.; Kanne, Thomas; Gejl, Aske Norskov; von Soosten, Merlin; Yodh, Jeremy S.; Sherman, Daniel; Tarasinski, Brian; Wimmer, Michael; Johnson, Erik; Deng, Mingtang; Nygard, Jesper; Jespersen, Thomas Sand; Marcus, Charles M.; Krogstrup, Peter.
I:
Physical Review Materials, Bind 2, Nr. 4, 044202, 12.04.2018.
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
Sestoft, JE, Kanne, T, Gejl, AN, von Soosten, M, Yodh, JS, Sherman, D, Tarasinski, B, Wimmer, M
, Johnson, E, Deng, M
, Nygard, J, Jespersen, TS
, Marcus, CM & Krogstrup, P 2018, '
Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection',
Physical Review Materials, bind 2, nr. 4, 044202.
https://doi.org/10.1103/PhysRevMaterials.2.044202
APA
Sestoft, J. E., Kanne, T., Gejl, A. N., von Soosten, M., Yodh, J. S., Sherman, D., Tarasinski, B., Wimmer, M.
, Johnson, E., Deng, M.
, Nygard, J., Jespersen, T. S.
, Marcus, C. M., & Krogstrup, P. (2018).
Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection.
Physical Review Materials,
2(4), [044202].
https://doi.org/10.1103/PhysRevMaterials.2.044202
Vancouver
Sestoft JE, Kanne T, Gejl AN, von Soosten M, Yodh JS, Sherman D o.a.
Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection.
Physical Review Materials. 2018 apr. 12;2(4). 044202.
https://doi.org/10.1103/PhysRevMaterials.2.044202
Author
Sestoft, Joachim E. ; Kanne, Thomas ; Gejl, Aske Norskov ; von Soosten, Merlin ; Yodh, Jeremy S. ; Sherman, Daniel ; Tarasinski, Brian ; Wimmer, Michael ; Johnson, Erik ; Deng, Mingtang ; Nygard, Jesper ; Jespersen, Thomas Sand ; Marcus, Charles M. ; Krogstrup, Peter. / Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection. I: Physical Review Materials. 2018 ; Bind 2, Nr. 4.
Bibtex
@article{c9af08657c8e4538a7b32a58591f09b5,
title = "Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection",
author = "Sestoft, {Joachim E.} and Thomas Kanne and Gejl, {Aske Norskov} and {von Soosten}, Merlin and Yodh, {Jeremy S.} and Daniel Sherman and Brian Tarasinski and Michael Wimmer and Erik Johnson and Mingtang Deng and Jesper Nygard and Jespersen, {Thomas Sand} and Marcus, {Charles M.} and Peter Krogstrup",
note = "[Qdev]",
year = "2018",
month = apr,
day = "12",
doi = "10.1103/PhysRevMaterials.2.044202",
language = "English",
volume = "2",
journal = "Physical Review Materials",
issn = "2475-9953",
publisher = "American Physical Society",
number = "4",
}
RIS
TY - JOUR
T1 - Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection
AU - Sestoft, Joachim E.
AU - Kanne, Thomas
AU - Gejl, Aske Norskov
AU - von Soosten, Merlin
AU - Yodh, Jeremy S.
AU - Sherman, Daniel
AU - Tarasinski, Brian
AU - Wimmer, Michael
AU - Johnson, Erik
AU - Deng, Mingtang
AU - Nygard, Jesper
AU - Jespersen, Thomas Sand
AU - Marcus, Charles M.
AU - Krogstrup, Peter
N1 - [Qdev]
PY - 2018/4/12
Y1 - 2018/4/12
U2 - 10.1103/PhysRevMaterials.2.044202
DO - 10.1103/PhysRevMaterials.2.044202
M3 - Journal article
VL - 2
JO - Physical Review Materials
JF - Physical Review Materials
SN - 2475-9953
IS - 4
M1 - 044202
ER -