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Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. / Hutin, L.; Bertrand, B.; Chanrion, E.; Bohuslavskyi, H.; Ansaloni, F.; Yang, T. Y.; Michniewicz, J.; Niegemann, D. J.; Spence, C.; Lundberg, T.; Chatterjee, A.; Crippa, A.; Li, J.; Maurand, R.; Jehl, X.; Sanquer, M.; Gonzalez-Zalba, M. F.; Kuemmeth, F.; Niquet, Y. M.; De Franceschi, S.; Urdampilleta, M.; Meunier, T.; Vinet, M.
2019 IEEE International Electron Devices Meeting, IEDM 2019. IEEE, 2019. 8993580 (Technical Digest - International Electron Devices Meeting, IEDM, Bind 2019-December).
Publikation: Bidrag til bog/antologi/rapport › Konferencebidrag i proceedings › Forskning › fagfællebedømt
Harvard
Hutin, L, Bertrand, B, Chanrion, E, Bohuslavskyi, H, Ansaloni, F, Yang, TY, Michniewicz, J, Niegemann, DJ, Spence, C, Lundberg, T
, Chatterjee, A, Crippa, A, Li, J, Maurand, R, Jehl, X, Sanquer, M, Gonzalez-Zalba, MF
, Kuemmeth, F, Niquet, YM, De Franceschi, S, Urdampilleta, M, Meunier, T & Vinet, M 2019,
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. i
2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993580, IEEE, Technical Digest - International Electron Devices Meeting, IEDM, bind 2019-December, 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, USA,
07/12/2019.
https://doi.org/10.1109/IEDM19573.2019.8993580APA
Hutin, L., Bertrand, B., Chanrion, E., Bohuslavskyi, H., Ansaloni, F., Yang, T. Y., Michniewicz, J., Niegemann, D. J., Spence, C., Lundberg, T.
, Chatterjee, A., Crippa, A., Li, J., Maurand, R., Jehl, X., Sanquer, M., Gonzalez-Zalba, M. F.
, Kuemmeth, F., Niquet, Y. M., ... Vinet, M. (2019).
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. I
2019 IEEE International Electron Devices Meeting, IEDM 2019 [8993580] IEEE. Technical Digest - International Electron Devices Meeting, IEDM Bind 2019-December
https://doi.org/10.1109/IEDM19573.2019.8993580Vancouver
Hutin L, Bertrand B, Chanrion E, Bohuslavskyi H, Ansaloni F, Yang TY o.a.
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. I 2019 IEEE International Electron Devices Meeting, IEDM 2019. IEEE. 2019. 8993580. (Technical Digest - International Electron Devices Meeting, IEDM, Bind 2019-December).
https://doi.org/10.1109/IEDM19573.2019.8993580Author
Hutin, L. ; Bertrand, B. ; Chanrion, E. ; Bohuslavskyi, H. ; Ansaloni, F. ; Yang, T. Y. ; Michniewicz, J. ; Niegemann, D. J. ; Spence, C. ; Lundberg, T. ; Chatterjee, A. ; Crippa, A. ; Li, J. ; Maurand, R. ; Jehl, X. ; Sanquer, M. ; Gonzalez-Zalba, M. F. ; Kuemmeth, F. ; Niquet, Y. M. ; De Franceschi, S. ; Urdampilleta, M. ; Meunier, T. ; Vinet, M. / Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. 2019 IEEE International Electron Devices Meeting, IEDM 2019. IEEE, 2019. (Technical Digest - International Electron Devices Meeting, IEDM, Bind 2019-December).
Bibtex
@inproceedings{7c4a52fab6c24324905b7b9f51fc2109,
title = "Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays",
abstract = "We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.",
author = "L. Hutin and B. Bertrand and E. Chanrion and H. Bohuslavskyi and F. Ansaloni and Yang, {T. Y.} and J. Michniewicz and Niegemann, {D. J.} and C. Spence and T. Lundberg and A. Chatterjee and A. Crippa and J. Li and R. Maurand and X. Jehl and M. Sanquer and Gonzalez-Zalba, {M. F.} and F. Kuemmeth and Niquet, {Y. M.} and {De Franceschi}, S. and M. Urdampilleta and T. Meunier and M. Vinet",
year = "2019",
doi = "10.1109/IEDM19573.2019.8993580",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "IEEE",
booktitle = "2019 IEEE International Electron Devices Meeting, IEDM 2019",
note = "65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",
}
RIS
TY - GEN
T1 - Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
AU - Hutin, L.
AU - Bertrand, B.
AU - Chanrion, E.
AU - Bohuslavskyi, H.
AU - Ansaloni, F.
AU - Yang, T. Y.
AU - Michniewicz, J.
AU - Niegemann, D. J.
AU - Spence, C.
AU - Lundberg, T.
AU - Chatterjee, A.
AU - Crippa, A.
AU - Li, J.
AU - Maurand, R.
AU - Jehl, X.
AU - Sanquer, M.
AU - Gonzalez-Zalba, M. F.
AU - Kuemmeth, F.
AU - Niquet, Y. M.
AU - De Franceschi, S.
AU - Urdampilleta, M.
AU - Meunier, T.
AU - Vinet, M.
PY - 2019
Y1 - 2019
N2 - We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.
AB - We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.
U2 - 10.1109/IEDM19573.2019.8993580
DO - 10.1109/IEDM19573.2019.8993580
M3 - Article in proceedings
AN - SCOPUS:85081058881
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2019 IEEE International Electron Devices Meeting, IEDM 2019
PB - IEEE
T2 - 65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Y2 - 7 December 2019 through 11 December 2019
ER -
