A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor
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A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor. / Hu, Yongjie; Churchill, Hugh; Reilly, David; Xiang, Jie; Lieber, Charles; M. Marcus, Charles.
I: Nature Nanotechnology, Bind 2, 15.06.2007, s. 622-625.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
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TY - JOUR
T1 - A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor
AU - Hu, Yongjie
AU - Churchill, Hugh
AU - Reilly, David
AU - Xiang, Jie
AU - Lieber, Charles
AU - M. Marcus, Charles
PY - 2007/6/15
Y1 - 2007/6/15
N2 - Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top gate-defined double quantum dot based on Ge/Si heterostructure nanowires with fully tunable coupling between the dots and to the leads. We also demonstrate a novel approach to charge sensing in a one-dimensional nanostructure by capacitively coupling the double dot to a single dot on an adjacent nanowire. The double quantum dot and integrated charge sensor serve as an essential building block required to form a solid-state spin qubit free of nuclear spin.
AB - Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top gate-defined double quantum dot based on Ge/Si heterostructure nanowires with fully tunable coupling between the dots and to the leads. We also demonstrate a novel approach to charge sensing in a one-dimensional nanostructure by capacitively coupling the double dot to a single dot on an adjacent nanowire. The double quantum dot and integrated charge sensor serve as an essential building block required to form a solid-state spin qubit free of nuclear spin.
KW - cond-mat.mes-hall
KW - cond-mat.mtrl-sci
U2 - 10.1038/nnano.2007.302
DO - 10.1038/nnano.2007.302
M3 - Journal article
C2 - 18654386
VL - 2
SP - 622
EP - 625
JO - Nature Nanotechnology
JF - Nature Nanotechnology
SN - 1748-3387
ER -
ID: 38327276