A Two-Dimensional Superconducting Electron Gas in Freestanding LaAlO3/SrTiO3 Micromembranes

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Standard

A Two-Dimensional Superconducting Electron Gas in Freestanding LaAlO3/SrTiO3 Micromembranes. / Erlandsen, Ricci; Dahm, Rasmus Tindal; Trier, Felix; Scuderi, Mario; Di Gennaro, Emiliano; Sambri, Alessia; Kirchert, Charline Kaisa Reffeldt; Pryds, Nini; Granozio, Fabio Miletto; Jespersen, Thomas Sand.

I: Nano Letters, Bind 22, Nr. 12, 2022, s. 4758-4764.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt

Harvard

Erlandsen, R, Dahm, RT, Trier, F, Scuderi, M, Di Gennaro, E, Sambri, A, Kirchert, CKR, Pryds, N, Granozio, FM & Jespersen, TS 2022, 'A Two-Dimensional Superconducting Electron Gas in Freestanding LaAlO3/SrTiO3 Micromembranes', Nano Letters, bind 22, nr. 12, s. 4758-4764. https://doi.org/10.1021/acs.nanolett.2c00992

APA

Erlandsen, R., Dahm, R. T., Trier, F., Scuderi, M., Di Gennaro, E., Sambri, A., Kirchert, C. K. R., Pryds, N., Granozio, F. M., & Jespersen, T. S. (2022). A Two-Dimensional Superconducting Electron Gas in Freestanding LaAlO3/SrTiO3 Micromembranes. Nano Letters, 22(12), 4758-4764. https://doi.org/10.1021/acs.nanolett.2c00992

Vancouver

Erlandsen R, Dahm RT, Trier F, Scuderi M, Di Gennaro E, Sambri A o.a. A Two-Dimensional Superconducting Electron Gas in Freestanding LaAlO3/SrTiO3 Micromembranes. Nano Letters. 2022;22(12):4758-4764. https://doi.org/10.1021/acs.nanolett.2c00992

Author

Erlandsen, Ricci ; Dahm, Rasmus Tindal ; Trier, Felix ; Scuderi, Mario ; Di Gennaro, Emiliano ; Sambri, Alessia ; Kirchert, Charline Kaisa Reffeldt ; Pryds, Nini ; Granozio, Fabio Miletto ; Jespersen, Thomas Sand. / A Two-Dimensional Superconducting Electron Gas in Freestanding LaAlO3/SrTiO3 Micromembranes. I: Nano Letters. 2022 ; Bind 22, Nr. 12. s. 4758-4764.

Bibtex

@article{98d5e33f318e485d83c3cf24a3b2638c,
title = "A Two-Dimensional Superconducting Electron Gas in Freestanding LaAlO3/SrTiO3 Micromembranes",
abstract = "Freestanding oxide membranes constitute an intriguing material platform for new functionalities and allow integration of oxide electronics with technologically important platforms such as silicon. Sambri et al. recently reported a method to fabricate freestanding LaAlO3/SrTiO3 (LAO/STO) membranes by spalling of strained heterostructures. Here, we first develop a scheme for the high-yield fabrication of membrane devices on silicon. Second, we show that the membranes exhibit metallic conductivity and a superconducting phase below similar to 200 mK. Using anisotropic magnetotransport we extract the superconducting phase coherence length xi approximate to 36-80 nm and establish an upper bound on the thickness of the superconducting electron gas d approximate to 17-33 nm, thus confirming its two-dimensional character. Finally, we show that the critical current can be modulated using a silicon-based backgate. The ability to form superconducting nanostructures of LAO/STO membranes, with electronic properties similar to those of the bulk counterpart, opens opportunities for integrating oxide nanoelectronics with silicon-based architectures.",
keywords = "LAO/STO heterostructure, freestanding membrane, superconductivity, strain, FIELD CONTROL, OXIDE, INTERFACES, SI",
author = "Ricci Erlandsen and Dahm, {Rasmus Tindal} and Felix Trier and Mario Scuderi and {Di Gennaro}, Emiliano and Alessia Sambri and Kirchert, {Charline Kaisa Reffeldt} and Nini Pryds and Granozio, {Fabio Miletto} and Jespersen, {Thomas Sand}",
year = "2022",
doi = "10.1021/acs.nanolett.2c00992",
language = "English",
volume = "22",
pages = "4758--4764",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "12",

}

RIS

TY - JOUR

T1 - A Two-Dimensional Superconducting Electron Gas in Freestanding LaAlO3/SrTiO3 Micromembranes

AU - Erlandsen, Ricci

AU - Dahm, Rasmus Tindal

AU - Trier, Felix

AU - Scuderi, Mario

AU - Di Gennaro, Emiliano

AU - Sambri, Alessia

AU - Kirchert, Charline Kaisa Reffeldt

AU - Pryds, Nini

AU - Granozio, Fabio Miletto

AU - Jespersen, Thomas Sand

PY - 2022

Y1 - 2022

N2 - Freestanding oxide membranes constitute an intriguing material platform for new functionalities and allow integration of oxide electronics with technologically important platforms such as silicon. Sambri et al. recently reported a method to fabricate freestanding LaAlO3/SrTiO3 (LAO/STO) membranes by spalling of strained heterostructures. Here, we first develop a scheme for the high-yield fabrication of membrane devices on silicon. Second, we show that the membranes exhibit metallic conductivity and a superconducting phase below similar to 200 mK. Using anisotropic magnetotransport we extract the superconducting phase coherence length xi approximate to 36-80 nm and establish an upper bound on the thickness of the superconducting electron gas d approximate to 17-33 nm, thus confirming its two-dimensional character. Finally, we show that the critical current can be modulated using a silicon-based backgate. The ability to form superconducting nanostructures of LAO/STO membranes, with electronic properties similar to those of the bulk counterpart, opens opportunities for integrating oxide nanoelectronics with silicon-based architectures.

AB - Freestanding oxide membranes constitute an intriguing material platform for new functionalities and allow integration of oxide electronics with technologically important platforms such as silicon. Sambri et al. recently reported a method to fabricate freestanding LaAlO3/SrTiO3 (LAO/STO) membranes by spalling of strained heterostructures. Here, we first develop a scheme for the high-yield fabrication of membrane devices on silicon. Second, we show that the membranes exhibit metallic conductivity and a superconducting phase below similar to 200 mK. Using anisotropic magnetotransport we extract the superconducting phase coherence length xi approximate to 36-80 nm and establish an upper bound on the thickness of the superconducting electron gas d approximate to 17-33 nm, thus confirming its two-dimensional character. Finally, we show that the critical current can be modulated using a silicon-based backgate. The ability to form superconducting nanostructures of LAO/STO membranes, with electronic properties similar to those of the bulk counterpart, opens opportunities for integrating oxide nanoelectronics with silicon-based architectures.

KW - LAO/STO heterostructure

KW - freestanding membrane

KW - superconductivity

KW - strain

KW - FIELD CONTROL

KW - OXIDE

KW - INTERFACES

KW - SI

U2 - 10.1021/acs.nanolett.2c00992

DO - 10.1021/acs.nanolett.2c00992

M3 - Journal article

C2 - 35679577

VL - 22

SP - 4758

EP - 4764

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 12

ER -

ID: 315461148