Double Nanowires for Hybrid Quantum Devices
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Standard
Double Nanowires for Hybrid Quantum Devices. / Kanne, Thomas; Olsteins, Dags; Marnauza, Mikelis; Vekris, Alexandros; Saldana, Juan Carlos Estrada; Loric, Sara; Schlosser, Rasmus D.; Ross, Daniel; Csonka, Szabolcs; Grove-Rasmussen, Kasper; Nygård, Jesper.
I: Advanced Functional Materials, Bind 32, Nr. 9, 2107926, 21.11.2021.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
APA
Vancouver
Author
Bibtex
}
RIS
TY - JOUR
T1 - Double Nanowires for Hybrid Quantum Devices
AU - Kanne, Thomas
AU - Olsteins, Dags
AU - Marnauza, Mikelis
AU - Vekris, Alexandros
AU - Saldana, Juan Carlos Estrada
AU - Loric, Sara
AU - Schlosser, Rasmus D.
AU - Ross, Daniel
AU - Csonka, Szabolcs
AU - Grove-Rasmussen, Kasper
AU - Nygård, Jesper
PY - 2021/11/21
Y1 - 2021/11/21
N2 - Parallel 1D semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely, for example, on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity, and the coupling between the different elements should be controllable in terms of their interfaces and geometry. A strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy is presented. A superconducting layer is deposited onto nanowires without breaking the vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires with full or half-shell superconductor coatings. Their utility in complex quantum devices by electron transport measurements is demonstrated.
AB - Parallel 1D semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely, for example, on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity, and the coupling between the different elements should be controllable in terms of their interfaces and geometry. A strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy is presented. A superconducting layer is deposited onto nanowires without breaking the vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires with full or half-shell superconductor coatings. Their utility in complex quantum devices by electron transport measurements is demonstrated.
KW - hybrid semiconductor-superconductor nanomaterials
KW - parallel nanowires
KW - quantum materials
KW - semiconductor nanowires
KW - TRANSPORT
KW - EPITAXY
KW - GROWTH
U2 - 10.1002/adfm.202107926
DO - 10.1002/adfm.202107926
M3 - Journal article
VL - 32
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 9
M1 - 2107926
ER -
ID: 285726141