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Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate. / Volk, Christian; Chatterjee, Anasua; Ansaloni, Fabio; Marcus, Charles M.; Kuemmeth, Ferdinand.
I:
Nano Letters, Bind 19, Nr. 8, 2019, s. 5628-5633.
Publikation: Bidrag til tidsskrift › Letter › Forskning › fagfællebedømt
Harvard
Volk, C
, Chatterjee, A, Ansaloni, F
, Marcus, CM & Kuemmeth, F 2019, '
Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate',
Nano Letters, bind 19, nr. 8, s. 5628-5633.
https://doi.org/10.1021/acs.nanolett.9b02149
APA
Volk, C.
, Chatterjee, A., Ansaloni, F.
, Marcus, C. M., & Kuemmeth, F. (2019).
Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate.
Nano Letters,
19(8), 5628-5633.
https://doi.org/10.1021/acs.nanolett.9b02149
Vancouver
Volk C
, Chatterjee A, Ansaloni F
, Marcus CM, Kuemmeth F.
Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate.
Nano Letters. 2019;19(8):5628-5633.
https://doi.org/10.1021/acs.nanolett.9b02149
Author
Volk, Christian ; Chatterjee, Anasua ; Ansaloni, Fabio ; Marcus, Charles M. ; Kuemmeth, Ferdinand. / Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate. I: Nano Letters. 2019 ; Bind 19, Nr. 8. s. 5628-5633.
Bibtex
@article{5b6211f25233427b87717c53b04cd006,
title = "Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate",
author = "Christian Volk and Anasua Chatterjee and Fabio Ansaloni and Marcus, {Charles M.} and Ferdinand Kuemmeth",
note = "- Marie Sk{\l}odowska-Curie Actions - Nanoscale solid-state spin systems in emerging quantum technologies - Spin-NANO, Grant Agreement Number 676108 - Publication date: “24. July 2019 - Embargo period: 12 months - Nano Letters 19, 5628−5633 (2019), DOI: 10.1021/acs.nanolett.9b02149 - This work received funding from the European Union (EU){\textquoteright}s Horizon 2020 research and innovation programme H2020-ICT-2015 under grant agreement No 688539",
year = "2019",
doi = "10.1021/acs.nanolett.9b02149",
language = "English",
volume = "19",
pages = "5628--5633",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "8",
}
RIS
TY - JOUR
T1 - Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate
AU - Volk, Christian
AU - Chatterjee, Anasua
AU - Ansaloni, Fabio
AU - Marcus, Charles M.
AU - Kuemmeth, Ferdinand
N1 - - Marie Skłodowska-Curie Actions
- Nanoscale solid-state spin systems in emerging quantum technologies - Spin-NANO, Grant Agreement Number 676108
- Publication date: “24. July 2019
- Embargo period: 12 months
- Nano Letters 19, 5628−5633 (2019), DOI: 10.1021/acs.nanolett.9b02149
- This work received funding from the European Union (EU)’s Horizon 2020 research and innovation programme H2020-ICT-2015 under grant agreement No 688539
PY - 2019
Y1 - 2019
U2 - 10.1021/acs.nanolett.9b02149
DO - 10.1021/acs.nanolett.9b02149
M3 - Letter
C2 - 31339321
VL - 19
SP - 5628
EP - 5633
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 8
ER -