Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS.
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Standard
Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS. / Olsen, Janus Staun.
I: Journal of Applied Physics, Nr. 86, 1999, s. 6608-6610.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
Olsen, JS 1999, 'Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS.', Journal of Applied Physics, nr. 86, s. 6608-6610.
APA
Olsen, J. S. (1999). Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS. Journal of Applied Physics, (86), 6608-6610.
Vancouver
Olsen JS. Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS. Journal of Applied Physics. 1999;(86):6608-6610.
Author
Bibtex
@article{cdb9aae074c811dbbee902004c4f4f50,
title = "Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS.",
author = "Olsen, {Janus Staun}",
year = "1999",
language = "English",
pages = "6608--6610",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "86",
}
RIS
TY - JOUR
T1 - Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS.
AU - Olsen, Janus Staun
PY - 1999
Y1 - 1999
M3 - Journal article
SP - 6608
EP - 6610
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 86
ER -
ID: 188289