TY - BOOK

T1 - Growth of Ag-seeded III-V Nanowires and TEM Characterization

AU - Lindberg, Anna Helmi Caroline

PY - 2017

Y1 - 2017

N2 - This thesis deals with growth and characterization of GaAs and InAs nanowires. TodayAu nanoparticle-seeding together with self-catalyzing are the dominating techniques togrow III-V nanowires with molecular beam epitaxy. In this thesis we instead investigatethe possibility to use Ag as seed particle for growth of GaAs and InAs nanowires. The aimwith the experiments performed has been to conclude whether Ag can be used to nucleateand grow nanowires on III-V substrates with molecular beam epitaxy. To investigate thiswe have performed growths of GaAs nanowires on GaAs(111)B and GaAs(100) substratesas well as growths of InAs nanowires on InAs(111)B substrates. We have used a widerange of the basic growth parameters, such as temperature, As-pressure and group III-ux, in order to nd good growth conditions for the Ag-seeded nanowires. The overallgrowths have been evaluated with SEM and, when appropriate, the density and thevertical yield were obtained. The crystal structures for the grown nanowires have beeninvestigated with TEM.We have also performed additional growths to further understandexactly how the nanowire growth proceeds as well as to understand the limitations of usingAg as a seed particle.The last chapter presents our results from combining TEM and Raman spectroscopyto evaluate the possibility to use Raman spectroscopy to nd stacking faults and crystaldefects in GaAs and InAs wurtzite nanowires. We performed TEM on both InAsnanowires and GaAs nanowires to deduce the stacking fault/crystal defect density andthe results were then compared to Raman spectroscopy on the nanowires.

AB - This thesis deals with growth and characterization of GaAs and InAs nanowires. TodayAu nanoparticle-seeding together with self-catalyzing are the dominating techniques togrow III-V nanowires with molecular beam epitaxy. In this thesis we instead investigatethe possibility to use Ag as seed particle for growth of GaAs and InAs nanowires. The aimwith the experiments performed has been to conclude whether Ag can be used to nucleateand grow nanowires on III-V substrates with molecular beam epitaxy. To investigate thiswe have performed growths of GaAs nanowires on GaAs(111)B and GaAs(100) substratesas well as growths of InAs nanowires on InAs(111)B substrates. We have used a widerange of the basic growth parameters, such as temperature, As-pressure and group III-ux, in order to nd good growth conditions for the Ag-seeded nanowires. The overallgrowths have been evaluated with SEM and, when appropriate, the density and thevertical yield were obtained. The crystal structures for the grown nanowires have beeninvestigated with TEM.We have also performed additional growths to further understandexactly how the nanowire growth proceeds as well as to understand the limitations of usingAg as a seed particle.The last chapter presents our results from combining TEM and Raman spectroscopyto evaluate the possibility to use Raman spectroscopy to nd stacking faults and crystaldefects in GaAs and InAs wurtzite nanowires. We performed TEM on both InAsnanowires and GaAs nanowires to deduce the stacking fault/crystal defect density andthe results were then compared to Raman spectroscopy on the nanowires.

UR - https://soeg.kb.dk/permalink/45KBDK_KGL/fbp0ps/alma99122333650405763

M3 - Ph.D. thesis

BT - Growth of Ag-seeded III-V Nanowires and TEM Characterization

PB - The Niels Bohr Institute, Faculty of Science, University of Copenhagen

ER -