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High-performance ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities. / Chen, Zhuoying; Lee, Mi Jung; Ashraf, Raja Shahid; Gu, Yun; Albert-Seifried, Sebastian; Nielsen, Martin Meedom; Schroeder, Bob; Anthopoulos, Thomas D.; Heeney, Martin; McCulloch, Iain; Sirringhaus, Henning.
I:
Advanced Materials, Bind 24, Nr. 5, 2012, s. 647-652.
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
Chen, Z, Lee, MJ, Ashraf, RS, Gu, Y, Albert-Seifried, S, Nielsen, MM, Schroeder, B, Anthopoulos, TD, Heeney, M, McCulloch, I & Sirringhaus, H 2012, '
High-performance ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities',
Advanced Materials, bind 24, nr. 5, s. 647-652.
https://doi.org/10.1002/adma.201102786APA
Chen, Z., Lee, M. J., Ashraf, R. S., Gu, Y., Albert-Seifried, S., Nielsen, M. M., Schroeder, B., Anthopoulos, T. D., Heeney, M., McCulloch, I., & Sirringhaus, H. (2012).
High-performance ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities.
Advanced Materials,
24(5), 647-652.
https://doi.org/10.1002/adma.201102786Vancouver
Chen Z, Lee MJ, Ashraf RS, Gu Y, Albert-Seifried S, Nielsen MM o.a.
High-performance ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities.
Advanced Materials. 2012;24(5):647-652.
https://doi.org/10.1002/adma.201102786Author
Chen, Zhuoying ; Lee, Mi Jung ; Ashraf, Raja Shahid ; Gu, Yun ; Albert-Seifried, Sebastian ; Nielsen, Martin Meedom ; Schroeder, Bob ; Anthopoulos, Thomas D. ; Heeney, Martin ; McCulloch, Iain ; Sirringhaus, Henning. / High-performance ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities. I: Advanced Materials. 2012 ; Bind 24, Nr. 5. s. 647-652.
Bibtex
@article{6793233810934ee99debba490cfea319,
title = "High-performance ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities",
author = "Zhuoying Chen and Lee, {Mi Jung} and Ashraf, {Raja Shahid} and Yun Gu and Sebastian Albert-Seifried and Nielsen, {Martin Meedom} and Bob Schroeder and Anthopoulos, {Thomas D.} and Martin Heeney and Iain McCulloch and Henning Sirringhaus",
year = "2012",
doi = "10.1002/adma.201102786",
language = "English",
volume = "24",
pages = "647--652",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley - V C H Verlag GmbH & Co. KGaA",
number = "5",
}
RIS
TY - JOUR
T1 - High-performance ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities
AU - Chen, Zhuoying
AU - Lee, Mi Jung
AU - Ashraf, Raja Shahid
AU - Gu, Yun
AU - Albert-Seifried, Sebastian
AU - Nielsen, Martin Meedom
AU - Schroeder, Bob
AU - Anthopoulos, Thomas D.
AU - Heeney, Martin
AU - McCulloch, Iain
AU - Sirringhaus, Henning
PY - 2012
Y1 - 2012
U2 - 10.1002/adma.201102786
DO - 10.1002/adma.201102786
M3 - Journal article
C2 - 21997483
VL - 24
SP - 647
EP - 652
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 5
ER -
