High-pressure X-ray diffraction study of bulk- and nanocrystalline GaN
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Standard
High-pressure X-ray diffraction study of bulk- and nanocrystalline GaN. / Jørgensen, J.-E.; Jacobsen, J.M.; Jiang, J.Z.; Gerward, L.; Olsen, Janus Staun.
I: Journal of Applied Crystallography, Bind 36, 2003, s. 920-925.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
Jørgensen, J-E, Jacobsen, JM, Jiang, JZ, Gerward, L & Olsen, JS 2003, 'High-pressure X-ray diffraction study of bulk- and nanocrystalline GaN', Journal of Applied Crystallography, bind 36, s. 920-925.
APA
Jørgensen, J-E., Jacobsen, J. M., Jiang, J. Z., Gerward, L., & Olsen, J. S. (2003). High-pressure X-ray diffraction study of bulk- and nanocrystalline GaN. Journal of Applied Crystallography, 36, 920-925.
Vancouver
Jørgensen J-E, Jacobsen JM, Jiang JZ, Gerward L, Olsen JS. High-pressure X-ray diffraction study of bulk- and nanocrystalline GaN. Journal of Applied Crystallography. 2003;36:920-925.
Author
Bibtex
@article{7995e40074c411dbbee902004c4f4f50,
title = "High-pressure X-ray diffraction study of bulk- and nanocrystalline GaN",
author = "J.-E. J{\o}rgensen and J.M. Jacobsen and J.Z. Jiang and L. Gerward and Olsen, {Janus Staun}",
year = "2003",
language = "English",
volume = "36",
pages = "920--925",
journal = "Journal of Applied Crystallography",
issn = "0021-8898",
publisher = "Wiley-Blackwell",
}
RIS
TY - JOUR
T1 - High-pressure X-ray diffraction study of bulk- and nanocrystalline GaN
AU - Jørgensen, J.-E.
AU - Jacobsen, J.M.
AU - Jiang, J.Z.
AU - Gerward, L.
AU - Olsen, Janus Staun
PY - 2003
Y1 - 2003
M3 - Journal article
VL - 36
SP - 920
EP - 925
JO - Journal of Applied Crystallography
JF - Journal of Applied Crystallography
SN - 0021-8898
ER -
ID: 113986