Measuring the charge and spin states of electrons on individual dopant atoms in silicon

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt

Standard

Measuring the charge and spin states of electrons on individual dopant atoms in silicon. / Andresen, Søren Erfurt Sass; McCamey, Dane R.

I: Topics in Applied Physics, Bind 115, 2009, s. 169-182.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt

Harvard

Andresen, SES & McCamey, DR 2009, 'Measuring the charge and spin states of electrons on individual dopant atoms in silicon', Topics in Applied Physics, bind 115, s. 169-182.

APA

Andresen, S. E. S., & McCamey, D. R. (2009). Measuring the charge and spin states of electrons on individual dopant atoms in silicon. Topics in Applied Physics, 115, 169-182.

Vancouver

Andresen SES, McCamey DR. Measuring the charge and spin states of electrons on individual dopant atoms in silicon. Topics in Applied Physics. 2009;115:169-182.

Author

Andresen, Søren Erfurt Sass ; McCamey, Dane R. / Measuring the charge and spin states of electrons on individual dopant atoms in silicon. I: Topics in Applied Physics. 2009 ; Bind 115. s. 169-182.

Bibtex

@article{52ea1e002b7f11df8ed1000ea68e967b,
title = "Measuring the charge and spin states of electrons on individual dopant atoms in silicon",
author = "Andresen, {S{\o}ren Erfurt Sass} and McCamey, {Dane R.}",
year = "2009",
language = "English",
volume = "115",
pages = "169--182",
journal = "Topics in Applied Physics",
issn = "0303-4216",
publisher = "Springer",

}

RIS

TY - JOUR

T1 - Measuring the charge and spin states of electrons on individual dopant atoms in silicon

AU - Andresen, Søren Erfurt Sass

AU - McCamey, Dane R.

PY - 2009

Y1 - 2009

M3 - Journal article

VL - 115

SP - 169

EP - 182

JO - Topics in Applied Physics

JF - Topics in Applied Physics

SN - 0303-4216

ER -

ID: 18478364