Standard
p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating. / Ullah, A. R.; Meyer, F.; Gluschke, J. G.; Naureen, S.; Caroff, P.; Krogstrup, P.; Nygard, J.; Micolich, A. P.
I:
Nano Letters, Bind 18, Nr. 9, 01.09.2018, s. 5673-5680.
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
Ullah, AR, Meyer, F, Gluschke, JG, Naureen, S, Caroff, P
, Krogstrup, P, Nygard, J & Micolich, AP 2018, '
p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating',
Nano Letters, bind 18, nr. 9, s. 5673-5680.
https://doi.org/10.1021/acs.nanolett.8b02249
APA
Ullah, A. R., Meyer, F., Gluschke, J. G., Naureen, S., Caroff, P.
, Krogstrup, P., Nygard, J., & Micolich, A. P. (2018).
p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating.
Nano Letters,
18(9), 5673-5680.
https://doi.org/10.1021/acs.nanolett.8b02249
Vancouver
Ullah AR, Meyer F, Gluschke JG, Naureen S, Caroff P
, Krogstrup P o.a.
p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating.
Nano Letters. 2018 sep. 1;18(9):5673-5680.
https://doi.org/10.1021/acs.nanolett.8b02249
Author
Ullah, A. R. ; Meyer, F. ; Gluschke, J. G. ; Naureen, S. ; Caroff, P. ; Krogstrup, P. ; Nygard, J. ; Micolich, A. P. / p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating. I: Nano Letters. 2018 ; Bind 18, Nr. 9. s. 5673-5680.
Bibtex
@article{76424669526740658a503f2ceb388c0d,
title = "p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating",
keywords = "Nanowire, transistor, MESFET, Schottky gate, p-GaAs",
author = "Ullah, {A. R.} and F. Meyer and Gluschke, {J. G.} and S. Naureen and P. Caroff and P. Krogstrup and J. Nygard and Micolich, {A. P.}",
note = "[Qdev]",
year = "2018",
month = sep,
day = "1",
doi = "10.1021/acs.nanolett.8b02249",
language = "English",
volume = "18",
pages = "5673--5680",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "9",
}
RIS
TY - JOUR
T1 - p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating
AU - Ullah, A. R.
AU - Meyer, F.
AU - Gluschke, J. G.
AU - Naureen, S.
AU - Caroff, P.
AU - Krogstrup, P.
AU - Nygard, J.
AU - Micolich, A. P.
N1 - [Qdev]
PY - 2018/9/1
Y1 - 2018/9/1
KW - Nanowire
KW - transistor
KW - MESFET
KW - Schottky gate
KW - p-GaAs
U2 - 10.1021/acs.nanolett.8b02249
DO - 10.1021/acs.nanolett.8b02249
M3 - Journal article
VL - 18
SP - 5673
EP - 5680
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 9
ER -