Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface
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Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface. / Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.; Sadowski, J.; Guertler, C.M.; Bland, J.A.C.; Rasmussen, Finn Berg.
I: Journal of Applied Physics, Bind 94, Nr. 6, 15.09.2003, s. 3990-3994.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
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TY - JOUR
T1 - Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface
AU - Andresen, S.E.
AU - Sørensen, B.S.
AU - Lindelof, P.E.
AU - Sadowski, J.
AU - Guertler, C.M.
AU - Bland, J.A.C.
AU - Rasmussen, Finn Berg
PY - 2003/9/15
Y1 - 2003/9/15
N2 - Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified by the strain-induced heavy-hole/light-hole splitting.
AB - Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified by the strain-induced heavy-hole/light-hole splitting.
KW - Faculty of Science
KW - Nano electronics
UR - http://www.scopus.com/inward/record.url?scp=0141886914&partnerID=8YFLogxK
U2 - 10.1063/1.1602945
DO - 10.1063/1.1602945
M3 - Journal article
AN - SCOPUS:0141886914
VL - 94
SP - 3990
EP - 3994
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 6
ER -
ID: 113616