Standard
Three-fold Symmetric Doping Mechanism in GaAs Nanowires. / Dastjerdi, M. H. T.; Fiordaliso, Elisabetta Maria; Leshchenko, E. D.; Akhtari-Zavareh, A.; Kasama, T.; Aagesen, M.; Dubrovskii, V. G.; LaPierre, R. R.
I:
Nano Letters, Bind 17, Nr. 10, 06.10.2017, s. 5875-5882.
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
Dastjerdi, MHT, Fiordaliso, EM, Leshchenko, ED, Akhtari-Zavareh, A, Kasama, T, Aagesen, M, Dubrovskii, VG & LaPierre, RR 2017, '
Three-fold Symmetric Doping Mechanism in GaAs Nanowires',
Nano Letters, bind 17, nr. 10, s. 5875-5882.
https://doi.org/10.1021/acs.nanolett.7b00794APA
Dastjerdi, M. H. T., Fiordaliso, E. M., Leshchenko, E. D., Akhtari-Zavareh, A., Kasama, T., Aagesen, M., Dubrovskii, V. G., & LaPierre, R. R. (2017).
Three-fold Symmetric Doping Mechanism in GaAs Nanowires.
Nano Letters,
17(10), 5875-5882.
https://doi.org/10.1021/acs.nanolett.7b00794Vancouver
Dastjerdi MHT, Fiordaliso EM, Leshchenko ED, Akhtari-Zavareh A, Kasama T, Aagesen M o.a.
Three-fold Symmetric Doping Mechanism in GaAs Nanowires.
Nano Letters. 2017 okt. 6;17(10):5875-5882.
https://doi.org/10.1021/acs.nanolett.7b00794Author
Dastjerdi, M. H. T. ; Fiordaliso, Elisabetta Maria ; Leshchenko, E. D. ; Akhtari-Zavareh, A. ; Kasama, T. ; Aagesen, M. ; Dubrovskii, V. G. ; LaPierre, R. R. / Three-fold Symmetric Doping Mechanism in GaAs Nanowires. I: Nano Letters. 2017 ; Bind 17, Nr. 10. s. 5875-5882.
Bibtex
@article{fd2b57bac119444db88a27acc13511d8,
title = "Three-fold Symmetric Doping Mechanism in GaAs Nanowires",
keywords = "GaAs, gallium arsenide, nanowires, self-assisted, molecular beam epitaxy, doping, beryllium",
author = "Dastjerdi, {M. H. T.} and Fiordaliso, {Elisabetta Maria} and Leshchenko, {E. D.} and A. Akhtari-Zavareh and T. Kasama and M. Aagesen and Dubrovskii, {V. G.} and LaPierre, {R. R.}",
note = "[Qdev]",
year = "2017",
month = oct,
day = "6",
doi = "10.1021/acs.nanolett.7b00794",
language = "English",
volume = "17",
pages = "5875--5882",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "10",
}
RIS
TY - JOUR
T1 - Three-fold Symmetric Doping Mechanism in GaAs Nanowires
AU - Dastjerdi, M. H. T.
AU - Fiordaliso, Elisabetta Maria
AU - Leshchenko, E. D.
AU - Akhtari-Zavareh, A.
AU - Kasama, T.
AU - Aagesen, M.
AU - Dubrovskii, V. G.
AU - LaPierre, R. R.
N1 - [Qdev]
PY - 2017/10/6
Y1 - 2017/10/6
KW - GaAs
KW - gallium arsenide
KW - nanowires
KW - self-assisted
KW - molecular beam epitaxy
KW - doping
KW - beryllium
U2 - 10.1021/acs.nanolett.7b00794
DO - 10.1021/acs.nanolett.7b00794
M3 - Journal article
C2 - 28903563
VL - 17
SP - 5875
EP - 5882
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 10
ER -
