Gate reflectometry in dense quantum dot arrays
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Gate reflectometry in dense quantum dot arrays. / Ansaloni, Fabio; Bohuslavskyi, Heorhii; Fedele, Federico; Rasmussen, Torbjorn; Brovang, Bertram; Berritta, Fabrizio; Heskes, Amber; Li, Jing; Hutin, Louis; Venitucci, Benjamin; Bertrand, Benoit; Vinet, Maud; Niquet, Yann-Michel; Chatterjee, Anasua; Kuemmeth, Ferdinand.
In: New Journal of Physics, Vol. 25, No. 3, 033023, 01.03.2023.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - Gate reflectometry in dense quantum dot arrays
AU - Ansaloni, Fabio
AU - Bohuslavskyi, Heorhii
AU - Fedele, Federico
AU - Rasmussen, Torbjorn
AU - Brovang, Bertram
AU - Berritta, Fabrizio
AU - Heskes, Amber
AU - Li, Jing
AU - Hutin, Louis
AU - Venitucci, Benjamin
AU - Bertrand, Benoit
AU - Vinet, Maud
AU - Niquet, Yann-Michel
AU - Chatterjee, Anasua
AU - Kuemmeth, Ferdinand
PY - 2023/3/1
Y1 - 2023/3/1
N2 - Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2 x 2 array of silicon QDs fabricated in a 300 mm-wafer foundry. Utilizing the strong capacitive couplings within the array, it is sufficient to monitor only one gate electrode via high-frequency reflectometry to establish single-electron occupation in each of the four dots and to detect single-electron movements with high bandwidth. A global top-gate electrode adjusts the overall tunneling times, while linear combinations of side-gate voltages yield detailed charge stability diagrams. To test for spin physics and Pauli spin blockade at finite magnetic fields, we implement symmetric gate-voltage pulses that directly reveal bidirectional interdot charge relaxation as a function of the detuning between two dots. Charge sensing within the array can be established without the involvement of adjacent electron reservoirs, important for scaling such split-gate devices towards longer 2 x N arrays. Our techniques may find use in the scaling of few-dot spin-qubit devices to large-scale quantum processors.
AB - Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2 x 2 array of silicon QDs fabricated in a 300 mm-wafer foundry. Utilizing the strong capacitive couplings within the array, it is sufficient to monitor only one gate electrode via high-frequency reflectometry to establish single-electron occupation in each of the four dots and to detect single-electron movements with high bandwidth. A global top-gate electrode adjusts the overall tunneling times, while linear combinations of side-gate voltages yield detailed charge stability diagrams. To test for spin physics and Pauli spin blockade at finite magnetic fields, we implement symmetric gate-voltage pulses that directly reveal bidirectional interdot charge relaxation as a function of the detuning between two dots. Charge sensing within the array can be established without the involvement of adjacent electron reservoirs, important for scaling such split-gate devices towards longer 2 x N arrays. Our techniques may find use in the scaling of few-dot spin-qubit devices to large-scale quantum processors.
KW - spin qubits
KW - reflectometry
KW - quantum dots
KW - TOMOGRAPHY
KW - OPERATION
KW - PROCESSOR
KW - QUBITS
KW - LOGIC
U2 - 10.1088/1367-2630/acc126
DO - 10.1088/1367-2630/acc126
M3 - Journal article
VL - 25
JO - New Journal of Physics
JF - New Journal of Physics
SN - 1367-2630
IS - 3
M1 - 033023
ER -
ID: 344426067