Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots
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Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots. / An, Sung Jin; Bae, Myung-Ho; Lee, Myoung-Jae; Song, Man Suk; Madsen, Morten H.; Nygard, Jesper; Schonenberger, Christian; Baumgartner, Andreas; Seo, Jungpil; Jung, Minkyung.
In: Nanoscale Advances, Vol. 2022, No. 4, 11.08.2022, p. 3816-3823.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots
AU - An, Sung Jin
AU - Bae, Myung-Ho
AU - Lee, Myoung-Jae
AU - Song, Man Suk
AU - Madsen, Morten H.
AU - Nygard, Jesper
AU - Schonenberger, Christian
AU - Baumgartner, Andreas
AU - Seo, Jungpil
AU - Jung, Minkyung
PY - 2022/8/11
Y1 - 2022/8/11
N2 - We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 mu m lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines.
AB - We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 mu m lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines.
KW - ACCURACY
U2 - 10.1039/d2na00372d
DO - 10.1039/d2na00372d
M3 - Journal article
C2 - 36133323
VL - 2022
SP - 3816
EP - 3823
JO - Nanoscale Advances
JF - Nanoscale Advances
SN - 2516-0230
IS - 4
ER -
ID: 317436442