Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots
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- d2na00372d
Final published version, 867 KB, PDF document
We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 mu m lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines.
Original language | English |
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Journal | Nanoscale Advances |
Volume | 2022 |
Issue number | 4 |
Pages (from-to) | 3816-3823 |
Number of pages | 8 |
ISSN | 2516-0230 |
DOIs | |
Publication status | Published - 11 Aug 2022 |
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