Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor. / MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Aagesen, M.; Lindelof, P. E.; Hamilton, A. R.

In: Applied Physics Letters, Vol. 104, No. 1, 012114, 06.01.2014.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

MacLeod, SJ, See, AM, Keane, ZK, Scriven, P, Micolich, AP, Aagesen, M, Lindelof, PE & Hamilton, AR 2014, 'Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor', Applied Physics Letters, vol. 104, no. 1, 012114. https://doi.org/10.1063/1.4858958

APA

MacLeod, S. J., See, A. M., Keane, Z. K., Scriven, P., Micolich, A. P., Aagesen, M., Lindelof, P. E., & Hamilton, A. R. (2014). Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor. Applied Physics Letters, 104(1), [012114]. https://doi.org/10.1063/1.4858958

Vancouver

MacLeod SJ, See AM, Keane ZK, Scriven P, Micolich AP, Aagesen M et al. Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor. Applied Physics Letters. 2014 Jan 6;104(1). 012114. https://doi.org/10.1063/1.4858958

Author

MacLeod, S. J. ; See, A. M. ; Keane, Z. K. ; Scriven, P. ; Micolich, A. P. ; Aagesen, M. ; Lindelof, P. E. ; Hamilton, A. R. / Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor. In: Applied Physics Letters. 2014 ; Vol. 104, No. 1.

Bibtex

@article{bc86f1da39f7411eadaf74f103c2274b,
title = "Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor",
abstract = "Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.",
author = "MacLeod, {S. J.} and See, {A. M.} and Keane, {Z. K.} and P. Scriven and Micolich, {A. P.} and M. Aagesen and Lindelof, {P. E.} and Hamilton, {A. R.}",
year = "2014",
month = jan,
day = "6",
doi = "10.1063/1.4858958",
language = "English",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "1",

}

RIS

TY - JOUR

T1 - Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

AU - MacLeod, S. J.

AU - See, A. M.

AU - Keane, Z. K.

AU - Scriven, P.

AU - Micolich, A. P.

AU - Aagesen, M.

AU - Lindelof, P. E.

AU - Hamilton, A. R.

PY - 2014/1/6

Y1 - 2014/1/6

N2 - Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

AB - Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

U2 - 10.1063/1.4858958

DO - 10.1063/1.4858958

M3 - Journal article

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

M1 - 012114

ER -

ID: 140164950