Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts
Research output: Contribution to journal › Journal article › Research › peer-review
Original language | English |
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Article number | 195303 |
Journal | Nanotechnology |
Volume | 27 |
Issue number | 19 |
Number of pages | 8 |
ISSN | 0957-4484 |
DOIs | |
Publication status | Published - 2016 |
Bibliographical note
[QDev]
- indium arsenide, nanowire, patterning, lithography, wet etch, quantum dot, galvanic
Research areas
ID: 161912451