Standard
Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures. / Yi, Wei; Kiselev, Andrey A.; Thorp, Jacob; Noah, Ramsey; Nguyen, Binh-Minh; Bui, Steven; Rajavel, Rajesh D.; Hussain, Tahir; Gyure, Mark F.; Kratz, Philip; Qian, Qi; Manfra, Michael J.; Pribiag, Vlad S.; Kouwenhoven, Leo P.; Marcus, Charles M.; Sokolich, Marko.
In:
Applied Physics Letters, Vol. 106, No. 14, 142103, 06.04.2015.
Research output: Contribution to journal › Journal article › Research › peer-review
Harvard
Yi, W, Kiselev, AA, Thorp, J, Noah, R, Nguyen, B-M, Bui, S, Rajavel, RD, Hussain, T, Gyure, MF, Kratz, P, Qian, Q, Manfra, MJ, Pribiag, VS, Kouwenhoven, LP
, Marcus, CM & Sokolich, M 2015, '
Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures',
Applied Physics Letters, vol. 106, no. 14, 142103.
https://doi.org/10.1063/1.4917027APA
Yi, W., Kiselev, A. A., Thorp, J., Noah, R., Nguyen, B-M., Bui, S., Rajavel, R. D., Hussain, T., Gyure, M. F., Kratz, P., Qian, Q., Manfra, M. J., Pribiag, V. S., Kouwenhoven, L. P.
, Marcus, C. M., & Sokolich, M. (2015).
Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures.
Applied Physics Letters,
106(14), [142103].
https://doi.org/10.1063/1.4917027Vancouver
Yi W, Kiselev AA, Thorp J, Noah R, Nguyen B-M, Bui S et al.
Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures.
Applied Physics Letters. 2015 Apr 6;106(14). 142103.
https://doi.org/10.1063/1.4917027Author
Yi, Wei ; Kiselev, Andrey A. ; Thorp, Jacob ; Noah, Ramsey ; Nguyen, Binh-Minh ; Bui, Steven ; Rajavel, Rajesh D. ; Hussain, Tahir ; Gyure, Mark F. ; Kratz, Philip ; Qian, Qi ; Manfra, Michael J. ; Pribiag, Vlad S. ; Kouwenhoven, Leo P. ; Marcus, Charles M. ; Sokolich, Marko. / Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures. In: Applied Physics Letters. 2015 ; Vol. 106, No. 14.
Bibtex
@article{072553c826744f708136fe43abd40840,
title = "Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures",
author = "Wei Yi and Kiselev, {Andrey A.} and Jacob Thorp and Ramsey Noah and Binh-Minh Nguyen and Steven Bui and Rajavel, {Rajesh D.} and Tahir Hussain and Gyure, {Mark F.} and Philip Kratz and Qi Qian and Manfra, {Michael J.} and Pribiag, {Vlad S.} and Kouwenhoven, {Leo P.} and Marcus, {Charles M.} and Marko Sokolich",
note = "[QDev]",
year = "2015",
month = apr,
day = "6",
doi = "10.1063/1.4917027",
language = "English",
volume = "106",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "14",
}
RIS
TY - JOUR
T1 - Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
AU - Yi, Wei
AU - Kiselev, Andrey A.
AU - Thorp, Jacob
AU - Noah, Ramsey
AU - Nguyen, Binh-Minh
AU - Bui, Steven
AU - Rajavel, Rajesh D.
AU - Hussain, Tahir
AU - Gyure, Mark F.
AU - Kratz, Philip
AU - Qian, Qi
AU - Manfra, Michael J.
AU - Pribiag, Vlad S.
AU - Kouwenhoven, Leo P.
AU - Marcus, Charles M.
AU - Sokolich, Marko
N1 - [QDev]
PY - 2015/4/6
Y1 - 2015/4/6
U2 - 10.1063/1.4917027
DO - 10.1063/1.4917027
M3 - Journal article
VL - 106
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
M1 - 142103
ER -
