Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon. / Hertel, Albert; Eichinger, Michaela; Andersen, Laurits O.; Zanten, David M. T. van; Kallatt, Sangeeth; Scarlino, Pasquale; Kringhoj, Anders; Chavez-Garcia, Jose M.; Gardner, Geoffrey C.; Gronin, Sergei; Manfra, Michael J.; Kjaergaard, Morten; Marcus, Charles M.; Petersson, Karl D.

In: Physical Review Applied, Vol. 18, No. 3, 034042, 16.09.2022.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Hertel, A, Eichinger, M, Andersen, LO, Zanten, DMTV, Kallatt, S, Scarlino, P, Kringhoj, A, Chavez-Garcia, JM, Gardner, GC, Gronin, S, Manfra, MJ, Kjaergaard, M, Marcus, CM & Petersson, KD 2022, 'Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon', Physical Review Applied, vol. 18, no. 3, 034042. https://doi.org/10.1103/PhysRevApplied.18.034042

APA

Hertel, A., Eichinger, M., Andersen, L. O., Zanten, D. M. T. V., Kallatt, S., Scarlino, P., Kringhoj, A., Chavez-Garcia, J. M., Gardner, G. C., Gronin, S., Manfra, M. J., Kjaergaard, M., Marcus, C. M., & Petersson, K. D. (2022). Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon. Physical Review Applied, 18(3), [034042]. https://doi.org/10.1103/PhysRevApplied.18.034042

Vancouver

Hertel A, Eichinger M, Andersen LO, Zanten DMTV, Kallatt S, Scarlino P et al. Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon. Physical Review Applied. 2022 Sep 16;18(3). 034042. https://doi.org/10.1103/PhysRevApplied.18.034042

Author

Hertel, Albert ; Eichinger, Michaela ; Andersen, Laurits O. ; Zanten, David M. T. van ; Kallatt, Sangeeth ; Scarlino, Pasquale ; Kringhoj, Anders ; Chavez-Garcia, Jose M. ; Gardner, Geoffrey C. ; Gronin, Sergei ; Manfra, Michael J. ; Kjaergaard, Morten ; Marcus, Charles M. ; Petersson, Karl D. / Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon. In: Physical Review Applied. 2022 ; Vol. 18, No. 3.

Bibtex

@article{e18bea917b2241faa117aac324e0db22,
title = "Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon",
abstract = "We present a gate-voltage-tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high-resistivity silicon substrate using III-V buffer layers. We show that low-loss superconducting resonators with an internal quality of 2 x 10(5) can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, T-1 asymptotic to 700 ns, and dephasing times, T-2* asymptotic to 20 ns and T-2,T-echo asymptotic to 1.3 mu s. Further, we infer a high junction transparency of 0.4-0.9 from an analysis of the qubit anharmonicity.",
author = "Albert Hertel and Michaela Eichinger and Andersen, {Laurits O.} and Zanten, {David M. T. van} and Sangeeth Kallatt and Pasquale Scarlino and Anders Kringhoj and Chavez-Garcia, {Jose M.} and Gardner, {Geoffrey C.} and Sergei Gronin and Manfra, {Michael J.} and Morten Kjaergaard and Marcus, {Charles M.} and Petersson, {Karl D.}",
year = "2022",
month = sep,
day = "16",
doi = "10.1103/PhysRevApplied.18.034042",
language = "English",
volume = "18",
journal = "Physical Review Applied",
issn = "2331-7019",
publisher = "American Physical Society",
number = "3",

}

RIS

TY - JOUR

T1 - Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

AU - Hertel, Albert

AU - Eichinger, Michaela

AU - Andersen, Laurits O.

AU - Zanten, David M. T. van

AU - Kallatt, Sangeeth

AU - Scarlino, Pasquale

AU - Kringhoj, Anders

AU - Chavez-Garcia, Jose M.

AU - Gardner, Geoffrey C.

AU - Gronin, Sergei

AU - Manfra, Michael J.

AU - Kjaergaard, Morten

AU - Marcus, Charles M.

AU - Petersson, Karl D.

PY - 2022/9/16

Y1 - 2022/9/16

N2 - We present a gate-voltage-tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high-resistivity silicon substrate using III-V buffer layers. We show that low-loss superconducting resonators with an internal quality of 2 x 10(5) can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, T-1 asymptotic to 700 ns, and dephasing times, T-2* asymptotic to 20 ns and T-2,T-echo asymptotic to 1.3 mu s. Further, we infer a high junction transparency of 0.4-0.9 from an analysis of the qubit anharmonicity.

AB - We present a gate-voltage-tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high-resistivity silicon substrate using III-V buffer layers. We show that low-loss superconducting resonators with an internal quality of 2 x 10(5) can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, T-1 asymptotic to 700 ns, and dephasing times, T-2* asymptotic to 20 ns and T-2,T-echo asymptotic to 1.3 mu s. Further, we infer a high junction transparency of 0.4-0.9 from an analysis of the qubit anharmonicity.

U2 - 10.1103/PhysRevApplied.18.034042

DO - 10.1103/PhysRevApplied.18.034042

M3 - Journal article

VL - 18

JO - Physical Review Applied

JF - Physical Review Applied

SN - 2331-7019

IS - 3

M1 - 034042

ER -

ID: 322557636