Master Thesis Defense: Arnulf Johannes Snedker-Nielsen
Adhesive Bonding of GaAs with Embedded Charge-tunable Indium Arsenide Quantum Dots to a Silicon Substrate
In this work, we present the heterogeneous integration of a p-i-n-i-n-doped Gallium Arsenide die with embedded Indium Arsenide quantum dots onto a Silica surface of a Silicon wafer. We present measurements of tunable single-photon emissions from the photonic circuits fabricated from this die and the results of new fabrication parameters for the grating couplers to and from the chip. Dots are shown to be in line with emissions from similar chips with a tunable range on par with other diode structures, while new grating designs are shown to have a smaller wavelength of transmission, but with a significantly lower transmission. We finally present a new concept for a nanophotonic circuit using the TM mode to excite the emitter and simulations of the expected efficiency of such a coupling. While more measurements are to come, so far indications are that high-quality integrated photon sources could be within reach with our method.