Quantifying the intrinsic amount of fabrication disorder in photonic-crystal waveguides from optical far-field intensity measurements
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Quantifying the intrinsic amount of fabrication disorder in photonic-crystal waveguides from optical far-field intensity measurements. / Garcia-Fernandez, Pedro David; Javadi, Alisa; Nielsen, Henri Thyrrestrup; Lodahl, Peter.
In: Applied Physics Letters, Vol. 102 , 031101, 22.01.2013.Research output: Contribution to journal › Journal article › Research › peer-review
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T1 - Quantifying the intrinsic amount of fabrication disorder in photonic-crystal waveguides from optical far-field intensity measurements
AU - Garcia-Fernandez, Pedro David
AU - Javadi, Alisa
AU - Nielsen, Henri Thyrrestrup
AU - Lodahl, Peter
PY - 2013/1/22
Y1 - 2013/1/22
N2 - Residual disorder due to fabrication imperfections has important impact in nanophotonics where it may degrade device performance by increasing radiation loss or spontaneously trap light by Anderson localization. We propose and demonstrate experimentally a method of quantifying the intrinsic amount of disorder in state-of-the-art photonic-crystal waveguides from far-fieldmeasurements of the Anderson-localized modes. This is achieved by comparing the spectral range where Anderson localization is observed to numerical simulations, and the method offers sensitivity down to 1nm.
AB - Residual disorder due to fabrication imperfections has important impact in nanophotonics where it may degrade device performance by increasing radiation loss or spontaneously trap light by Anderson localization. We propose and demonstrate experimentally a method of quantifying the intrinsic amount of disorder in state-of-the-art photonic-crystal waveguides from far-fieldmeasurements of the Anderson-localized modes. This is achieved by comparing the spectral range where Anderson localization is observed to numerical simulations, and the method offers sensitivity down to 1nm.
U2 - 10.1063/1.4788709
DO - 10.1063/1.4788709
M3 - Journal article
VL - 102
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
M1 - 031101
ER -
ID: 94627443