Quantum Optics Seminar by Andreas Wieck

Joining bottom-up and top-down: Molecular beam epitaxy and focused ion beams in the same ultra-high vacuum

We grow by molecular beam epitaxy (MBE) bandgap-engineered, GaAs-based semiconductor layers, InAs quantum dots and quantum wires. These systems are doped or modified by focused ion beam (FIB) implantation, using an ultra-high vacuum (UHV) transfer path. In this way, the MBE-growth and FIB implantation are performed in any sequence and maskless lateral patterning without surface chemistry or exposition to air/moisture is possible. We are able to produce any metal of the periodic table in the FIB beam (from Li to Bi), including the rare earths. This leads to an enormous flexibility and superior quality of the devices, produced monolithically in the UHV, being independent of surface states or other contaminations.